yobo体育app

yobo体育app:8月20日学术报告(微电子)---Prof. Peide Ye (叶培德教授):III-V 3D/4D Transistors

发布时间:2012-08-16 

美国Purdue大学的叶培德教授8月20日上午来复旦大学做报告,欢迎感兴趣的老师及学生参加。

学术报告

题目:III-V 3D/4D Transistors

报告人:Prof. Peide Ye (叶培德 教授)

School of Electrical and Computer Engineering, Purdue University

Recently, III-V MOSFETs with high drain currents (Ids>1mA/?m) and high transconductances (gm>1mS/?m) have been achieved at sub-micron channel lengths (Lch), thanks to the better understanding and significant improvement in high-k/III-V interfaces. However, to realize a III-V FET at beyond 14nm technology node, one major challenge is how to effectively control the short channel effects (SCE). Due to the higher permittivity and lower bandgap of the channel materials, III-V MOSFETs are more susceptible to SCE than its Si counterpart. The scaling of planar devices stops at around 150nm Lch. The dramatic increase in DIBL beyond 150nm indicates severe impact from 2D electrostatics. Therefore, the introduction of 3-dimensonal (3D) structures to the fabrication of sub-100nm III-V FETs is necessary. In this talk, we will review the materials and device aspects of III-V 3D transistors developed very recently [1-3]. We will also report some of new progress by demonstration of 20-80 nm channel length III-V gate-all-around nanowire MOSFETs with EOT=1.2nm and lowest SS=63 mV/dec [4]. The total drain current per pitch can be further enhanced by introducing 4D structures [5]. 

1. Y. Q. Wu et al. IEDM Tech. Dig. 331 (2009).

2. M. Radosavljevic et al., IEDM Tech. Dig. 126 (2010).

3. J. J. Gu et al. IEDM Tech Dig.  769 (2011).

4. J. J. Gu et al. IEDM Tech Dig.  A (2012).

5. J. J. Gu et al. IEDM Tech Dig.  B (2012).

 

时间:820日上午10 :00-11 :30

地点:复旦大学物理楼138会议室

 

yobo体育app-yobo手机下载app